Effect of redox proteins on the behavior of non-volatile memory.
نویسندگان
چکیده
We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (~11 V) and relatively good endurance properties (~over 100 cycles).
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ورودعنوان ژورنال:
- Chemical communications
دوره 48 98 شماره
صفحات -
تاریخ انتشار 2012